Semiconductor devices. Mechanical and climatic test methods - Neutron irradiation
Semiconductor devices. Mechanical and climatic test methods - Neutron irradiation
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Semiconductor devices. Mechanical and climatic test methods - Neutron irradiation

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What is BS EN IEC 6074917 about?  

BS EN IEC 6074917 is the 17th part of an international standard that covers the attributes of semiconductor devices. This specifies the neutron irradiation test method for determining the degradation parameters of critical semiconductor devices.  

BS EN IEC 6074917 specifies the neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. It gives technical specifications such as related terms and definitions, test apparatus, test procedure, safety requirements, etc. 

BS EN IEC 6074917 describes the test that is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. 

Who is BS EN IEC 6074917 for? 

BS EN IEC 6074917 on Semiconductor devices is applicable to: 

  • Semiconductor foundries 
  • Aerospace industries   
  • Defence  
  • Manufacturers of electronic devices 
  • Manufacturers of automotive parts 
  • Electronic engineers 

Why should you use BS EN IEC 6074917? 

Neutron irradiation is a neutron exposure process useful in determining the impact of radiation on materials properties and device performance. The neutron fluence used for device irradiation shall be obtained by measuring the amount of radioactivity induced in a fast-neutron threshold activation foil such as 32S, 54Fe, or 58Ni, irradiated simultaneously with the device.  

BS EN IEC 6074917 specifies the test methods and test procedures of neutron irradiation for you which help users in detecting and measuring the degradation parameters of critical semiconductor devices as a function of neutron fluence 

With the help of BS EN IEC 6074917, you can determine the parameters are within specified limits after exposure to the specified level of neutron fluence in Semiconductor devices. By using BS EN IEC 6074917 you can manufacture good quality semiconductor devices.  

What’s changed since the last update?  

BS EN IEC 6074917:2019 supersedes BS EN 6074917:2003, which is withdrawn. BS EN IEC 6074917:2019 includes some technical changes with respect to the previous edition as:  

  • Updates to better align the test method with MIL-STD 883J, method 1017, including removal of the restriction of the use of the document, and a requirement to limit the total ionization dose 
  • Addition of a Bibliography, including US MIL- and ASTM standards relevant to this test method